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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The PA1723 is N-Channel MOS Field Effect Transistor designed for power management switch.
PACKAGE DRAWING (Unit : mm)
8 5 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain
FEATURES
* Low on-state resistance RDS(on)1 = 6.7 m MAX. (VGS = 4.5 V, ID = 7.0 A)
1.44
RDS(on)2 = 7.4 m MAX. (VGS = 4.0 V, ID = 7.0 A)
1.8 MAX.
1 5.37 MAX.
4
6.0 0.3 4.4
+0.10 -0.05
0.8
RDS(on)3 = 8.7 m MAX. (VGS = 2.5 V, ID = 7.0 A) * Low Ciss : Ciss = 3800 pF TYP. * Built-in G-S protection diode * Small and surface mount package (Power SOP8)
0.15
0.05 MIN.
0.5 0.2 0.10
1.27 0.78 MAX. 0.40
+0.10 -0.05
0.12 M
ORDERING INFORMATION
PART NUMBER PACKAGE Power SOP8
PA1723G
ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse)
Note1 Note2
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
20 12 13 52 2.0 150 -55 to + 150
2
V V A A W C C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature
Gate
Body Diode
Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on ceramic substrate of 1200 mm x 2.2mm
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14026EJ1V0DS00 (1st edition) Date Published December 1999 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1998, 1999
PA1723
ELECTRICAL CHARACTERISTICS (TA = 25 C, All terminals are connected.)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 RDS(on)3 Gate to Source Cut-off Voltage VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = 4.5 V, ID = 7.0 A VGS = 4.0 V, ID = 7.0 A VGS = 2.5 V, ID = 7.0 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 7.0 A VDS = 20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = 10 V VGS = 0 V f = 1 MHz ID = 7.0 A VGS(on) = 4.5 V VDD = 10 V RG = 10 ID = 13 A VDD = 16 V VGS = 4.5 V IF = 13.0 A, VGS = 0 V IF = 13.0 A, VGS = 0 V di/dt = 100 A/ s 3800 1200 700 70 440 230 300 47.0 11.0 12.0 0.75 68 70 0.5 15.0 MIN. TYP. 5.4 5.5 6.5 0.9 32 10 10 MAX. 6.7 7.4 8.7 1.5 UNIT m m m V S
5
Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T. RL PG. RG RG = 10 VDD
ID 90 % 90 % ID 0 10 % td(on) ton tr td(off) toff 10 % tf VGS
D.U.T. IG = 2 mA
VGS(on) 90 %
VGS
Wave Form
RL VDD
0
10 %
PG.
50
VGS 0 = 1 s Duty Cycle 1 %
ID
Wave Form
2
Data Sheet G14026EJ1V0DS00
PA1723
5 TYPICAL CHARACTERISTICS (TA = 25 C)
FORWARD TRANSFER CHARACTERISTICS 100 Pulsed
50 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed
ID - Drain Current - A
10
ID - Drain Current - A
40 30 VGS = 4.5 V 20 10 VGS = 4.0 V VGS = 2.5 V
1
TA = 125C 75C 25C -25C VDS = 10 V 4 3
0.1 0 1 2
0 0.0
0.1
0.2
0.3
0.4
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 10
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed 8 ID = 3 A ID = 6 A 6
8
6
4
VGS = 2.5 V VGS = 4.0 V VGS = 4.5 V
4
2
2
0 - 100
- 50
0
50
100
150
0
0
5 VGS - Gate to Source Voltage - V
10
Tch - Channel Temperature - C
RDS(on) - Drain to Source On-state Resistance - m
10 Pulsed 8 VGS = 2.5 V 6 VGS = 4.0 V VGS = 4.5 V 4
VGS(off) - Gate to Source Cut-off Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 1.0 VDS = 10 V ID = 1 mA
0.5
2
0
0.1
1
10
100
0.2
- 50
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
Data Sheet G14026EJ1V0DS00
3
PA1723
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
|yfs| - Forward Transfer Admittance - S
100
VDS =10 V Pulsed
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 000 Pulsed
TC = -25C
TC = 25C
IF - Diode Forward Current - A
10
TC = 75C TC = 125C
100
VGS = 4.0 V VGS = 0 V
10
1
1
0.1 0.1
1
10
100
0.1 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID- Drain Current - A
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 000
SWITCHING CHARACTERISTICS 10 000
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
VGS = 0 V f = 1 MHz
1 000
tr tf td(off)
10 000 Ciss 1 000
100
td(on)
Coss Crss
10 VDS = 10 V VGS = 4.5 V RG = 10 100
100 0.1
1
10
100
1
0.1
1
10
VDS - Drain to Source Voltage - V
ID - Drain Current - A
Remark 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 000
trr - Reverse Recovery Time - ns
VDS - Drain to Source Voltage - V
25 20 15 10 5 VDS 0 VDD = 16 V 10 V 4V VGS
10 8 6 4 2 0 0 10 20 30 40 50 60 QG - Gate Charge - nC
100
10
1 0.1
1
10
100
ID - Drain Current - A
4
Data Sheet G14026EJ1V0DS00
VGS - Gate to Source Voltage - V
di/dt = 100A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 30 ID = 10 A
PA1723
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 2.8
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
100 80 60 40 20
2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80
Mounted on ceramic substrate of 1200 mm 2 x2.2 mm
0
20
40
60
80
100 120 140 160
100 120 140 160
TA - Ambient Temperature - C
TA - Ambient Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100
ID(pulse) = 52 A
d ite ) mV Li 4.5 ) on = S( S RD V G ID(DC) = (@
1 10
10
Po we
PW
m
=
s
10
0
s
ID - Drain Current - A
13 A
m
s
10
0
m
s
rD
iss
1
ipa
tio
n
Lim
ite
d
TA = 25 C 0.1 Single Pulse 0.1
Remark 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm
1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1 000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5C/W
10
1
0.1
0.01 0.001
Mounted on ceramic substrate of 1200mm2 x 2.2mm Single Pulse
10
100
1m
10 m
100 m
1
10
100
1 000
PW - Pulse Width - s
Data Sheet G14026EJ1V0DS00
5
PA1723
[MEMO]
6
Data Sheet G14026EJ1V0DS00
PA1723
[MEMO]
Data Sheet G14026EJ1V0DS00
7
PA1723
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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